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2N7002T
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
V GSS
I D
±20
±40
115
73
800
V
mA
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P d
R θ JA
T j, T STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
60
?
?
V
V GS = 0V, I D = 10 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = 25°C
@ T C = 125°C
I DSS
I GSS
?
?
?
?
1.0
500
±10
μA
nA
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
1.0
?
2.0
V
V DS = V GS , I D = 250 μ A
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
@ T j = 25°C
@ T j = 125°C
R DS (ON)
I D(ON)
g FS
?
0.5
80
2.0
4.4
1.0
?
7.5
13.5
?
?
Ω
A
mS
V GS = 5.0V, I D = 0.05A
V GS = 10V, I D = 0.5A
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
?
22
50
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
11
2.0
25
5.0
pF
pF
V DS = 25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
7.0
11
20
20
ns
ns
V DD = 30V, I D = 0.2A,
R L = 150 Ω , V GEN = 10V, R GEN = 25 Ω
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002T
Document number: DS30301 Rev. 14 - 2
2 of 5
www.diodes.com
April 2012
? Diodes Incorporated
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